Integrated structures and methods of forming integrated structures

A method of forming an integrated structure, comprising:

• providing a configuration having semiconductor material between a pair of parallel surfaces, the semiconductor material having a first crystallographic texture;
• the parallel surfaces and semiconductor material extending between a first end and a second end;
• forming metal adjacent the first end, the metal comprising one or more metals selected from the group consisting of aluminum, near-noble metal and noble metal;
• forming gettering material adjacent the second end;
• and
• thermal processing the semiconductor material and the gettering material, the thermodynamics driving the metal along the semiconductor material from the first end to the second end.

A method of forming an integrated structure, comprising:

• providing a configuration having semiconductor material between a pair of parallel surfaces, the configuration being a U-shaped NAND string with the parallel surfaces being U-shaped and on opposing sides of a channel region;
• the semiconductor material having a first crystallographic texture;
• the parallel surfaces and semiconductor material extending between a first end along one side of the U-shape and a second end along another side of the U-shape;
• forming metal adjacent the first end, the metal comprising one or more metals selected from the group consisting of aluminum, near-noble metal and noble metal;
• and
• thermal processing the semiconductor material with the metal therein, the metal inducing crystallization of the semiconductor material to transition the first crystallographic texture to a second crystallographic texture.

A method of forming an integrated structure, comprising:

• providing a configuration having semiconductor material between a pair of parallel surfaces, the configuration being a U-shaped NAND string with the parallel surfaces being U-shaped and on opposing sides of a channel region;
• the semiconductor material having a first crystallographic texture;
• the parallel surfaces and semiconductor material extending between a first end along one side of the U-shape and a second end along another side of the U-shape;
• forming a first region of gettering material across the second end, and forming a second region of the gettering material across the first region of the gettering material;
• the first and second regions of the gettering material being patterned to cover the second end while leaving the first end exposed;
• forming metal-barrier material over the second region of the gettering material;
• the metal-barrier material being patterned to cover the second region of the gettering material while leaving the first end exposed;
• and
• thermal processing the semiconductor material and the first and second regions of the gettering material;
• thermodynamics driving the metal along the semiconductor material from the first end to the second end.

An integrated structure comprising:

• semiconductor material extending through dielectric material, the semiconductor material comprising a first end spaced from a second end;
• a metal over the first end of the semiconductor material;
• a gettering material over the second end of the semiconductor material;
• and
• wherein the dielectric material comprises interior surfaces on opposing sides of the semiconductor material, the interior surfaces being in a parallel relationship to each other, the semiconductor material having grain boundaries parallel to the parallel interior surfaces.

An integrated structure comprising:

• semiconductor material extending through dielectric material, the semiconductor material comprising a first end spaced from a second end;
• a metal over the first end of the semiconductor material;
• a gettering material over the second end of the semiconductor material;
• wherein the semiconductor material comprises a channel structure and the dielectric material comprises a portion of a gated device;
• and
• wherein the gated device has Ion/Ioff characteristics within a factor of five as would occur if the semiconductor material had no metal therein.

An integrated structure comprising:

• semiconductor material extending through dielectric material, the semiconductor material comprising a first end spaced from a second end;
• a metal over the first end of the semiconductor material;
• a gettering material over the second end of the semiconductor material;
• wherein the semiconductor material comprises a channel structure and the dielectric material comprises a portion of a gated device;
• and
• wherein the gated device has Ion/Ioff characteristics within a factor of two as would occur if the semiconductor material had no metal therein.