Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorChih-Wei Huang
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of capacitor contacts positioned over the substrate, at least one of the plurality of capacitor contacts having a neck portion and a head portion over the neck portion, wherein an upper width of the head portion is larger than an upper width of the neck portion; a plurality of bit line contacts positioned over the substrate and a plurality of bit lines positioned over the plurality of bit line contacts, wherein at least one of the plurality of bit line is a wavy line extending between two adjacent capacitor contacts; and a capacitor structure positioned over the head portion.
Claims18
A semiconductor device, comprising:
- a substrate;
- a plurality of capacitor contacts positioned over the substrate, at least one of the plurality of capacitor contacts having a neck portion and a head portion over the neck portion, wherein an upper width of the head portion is larger than an upper width of the neck portion;
- a plurality of bit line contacts positioned over the substrate and a plurality of bit lines positioned over the plurality of bit line contacts, wherein at least one of the plurality of bit line is a wavy line extending between two adjacent capacitor contacts;
- a capacitor structure positioned over the head portion;
- a conductive feature comprising tungsten positioned above the substrate;
- and
- a plurality of word lines positioned in the substrate and a doped region positioned between an adjacent pair of the plurality of word lines, wherein the conductive feature is positioned on the doped region.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a plurality of bit line contacts over a first portion of the substrate;
- forming a plurality of bit lines over the plurality of bit line contacts;
- forming a capacitor contact including a neck portion over a second portion of the substrate and forming a head portion over the neck portion, wherein an upper width of the head portion is larger than an upper portion of the neck portion;
- and forming a capacitor structure over the head portion;
- forming a conductive feature comprising tungsten positioned above the substrate;
- forming a plurality of word lines positioned in the substrate and a doped region positioned between an adjacent pair of the plurality of word lines, wherein the conductive feature is positioned on the doped region;
- wherein at least one of the plurality of bit line is a wavy line extending between two adjacent capacitor contacts.
Dependencies are inferred from the claim text.