Memory cells, semiconductor devices comprising memory cells, and related systems
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
Life of this patent
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Abstract
A memory cell is disclosed. The memory cell includes a transistor and a capacitor. The transistor includes a source region, a drain region, and a channel region including an indium gallium zinc oxide (IGZO, which is also known in the art as GIZO) material. The capacitor is in operative communication with the transistor, and the capacitor includes a top capacitor electrode and a bottom capacitor electrode. Also disclosed is a semiconductor device including a dynamic random access memory (DRAM) array of DRAM cells. Also disclosed is a system including a memory array of DRAM cells and methods for forming the disclosed memory cells and arrays of cells.
Claims21
A semiconductor device, comprising:
- a dynamic random access memory (DRAM) array comprising DRAM cells, each DRAM cell comprising:
- a transistor comprising an indium gallium zinc oxide channel region isolated from an electrode material by an insulative material;
- and
- a capacitor in operative communication with the transistor,
- a portion of the indium gallium zinc oxide channel region proximal to the capacitor in direct contact with at least a portion of a metal material of the capacitor, wherein the metal material of the capacitor is a single material.
A semiconductor device comprising:
- at least one memory array comprising memory cells, at least one of the memory cells comprising:
- a transistor comprising:
- a first insulative material on an indium gallium zinc oxide channel region;
- and
- a second insulative material laterally adjacent the first insulative material;
- and
- a capacitor in operative communication with the transistor, an electrode of the capacitor comprising titanium nitride and in direct contact with the indium gallium zinc oxide channel region of the transistor.
A system comprising a memory array comprising dynamic random access memory (DRAM) cells, each DRAM cell comprising a channel region comprising an indium gallium zinc oxide material, opposing ends of the channel region in direct contact with a metal material, and one of the opposing ends of the channel region in direct contact with the metal material of a capacitor.
Dependencies are inferred from the claim text.