US 11,107,817 B2 · Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Abstract

Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Claims35

Dependent claims

An integrated assembly, comprising:

a first semiconductor material having a first side and an opposing second side;
a second semiconductor material directly adjacent to the first side of the first semiconductor material and being of a different composition than the first semiconductor material;
a third semiconductor material directly adjacent to the second side of the first semiconductor material and being of a different composition than the first semiconductor material, the first, second and a portion of the third semiconductor materials comprising a vertically-extending pillar;
and
only one gate adjacent one side of the vertically-extending pillar;
and
hydrogen diffused within the first, second and third semiconductor materials;
the second and third semiconductor materials having substantially increased conductivity as compared to the first semiconductor material in response to the hydrogen diffused therein.

5 more elements

Dependencies are inferred from the claim text.

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Life of this patent

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Life of this patent

Abstract

Claims35