Fin field effect transistor (FinFET) device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Pin Tsao, Jeng-Ya Yeh, Chia-Wei Soong
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Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate, and the substrate includes a first region and a second region. A gate structure is formed over a fin structure and a first S/D structure has a first volume. A second S/D structure has a second volume, and the second volume is lower than the first volume. A first contact structure is formed over the first S/D structure and a first conductive via is formed over the first contact structure. A power line is formed over the first conductive via, and the power line is electrically connected to the first S/D structure by the first conductive via and the first contact structure.
Claims20
A fin field effect transistor (FinFET) device structure, comprising:
- a fin structure formed over a substrate, wherein the substrate comprises a first region and a second region;
- a gate structure formed over a fin structure;
- a first source/drain (S/D) structure formed adjacent to the gate structure, wherein the first S/D structure is in the first region and has a first volume;
- a second S/D structure formed adjacent to the gate structure, wherein the second S/D structure is in the second region and has a second volume, and the second volume is lower than the first volume;
- a first contact structure formed over the first S/D structure;
- a first conductive via formed over the first contact structure;
- and
- a power line formed over the first conductive via, wherein the power line is electrically connected to the first S/D structure by the first conductive via and the first contact structure.
A fin field effect transistor (FinFET) device structure, comprising:
- a substrate, wherein the substrate comprises a pickup region and a non-pickup region;
- an isolation structure formed over the substrate;
- a first fin structure formed over the pickup region of the substrate;
- a second fin structure formed over the non-pickup region of the substrate;
- a first source/drain (S/D) structure formed over the first fin structure;
- a first fin spacer formed adjacent to the first S/D structure, wherein the first fin spacer has a first height measured from a top surface of the first fin spacer to a top surface of the isolation structure;
- a second S/D structure formed over the second fin structure;
- a second fin spacer formed adjacent to the second S/D structure, wherein the second fin spacer has a second height measured from a top surface of the second fin spacer to a top surface of the isolation structure, and the second fin spacer is higher than the first fin spacer;
- a first conductive via formed over the first S/D structure;
- and
- a power line formed over the first conductive via, wherein the power line is electrically connected to the first S/D structure by the first conductive via.
A fin field effect transistor (FinFET) device structure, comprising:
- a substrate, wherein the substrate comprises a pickup region and a non-pickup region;
- an isolation structure formed over the substrate;
- a first fin structure formed over the pickup region of the substrate, wherein a top surface of the first fin structure is lower than a top surface of the isolation structure;
- a second fin structure formed over the non-pickup region of the substrate;
- a first source/drain (S/D) structure formed over the first fin structure;
- a first fin spacer formed adjacent to the first S/D structure;
- and
- a doped region formed over the first fin spacer, wherein the first S/D structure extends above the first fin spacer.
Dependencies are inferred from the claim text.