Semiconductor device with nanowire plugs and method for fabricating the same

A method for fabricating a semiconductor device, comprising:

• providing a substrate including a plurality of first regions and second regions;
• forming a plurality of bit line contacts respectively over the plurality of first regions;
• forming a plurality of bit lines respectively over the plurality of bit line contacts;
• forming a plurality of capacitor contacts respectively over the plurality of second regions;
• forming a plurality of landing pads respectively over the plurality of capacitor contacts, wherein at least one of the plurality of landing pads comprises a protruding portion of a capacitor plug and a first spacer on a sidewall of the protruding portion;
• forming a plurality of conductive plugs respectively over the plurality of landing pads, wherein the plurality of conductive plugs comprise a plurality of nanowires, a conductive liner over the plurality of nanowires, and a conductor over the conductive liner;
• and
• forming a capacitor structure over the conductive plug;
• wherein at least one of the plurality of bit lines is a wavy line extending between two adjacent capacitor contacts.