Back to results
US 11,107,802 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeToshiba Memory Corporation
InventorHiroshi Nakaki
Life of this patent
Estimating the term…
Abstract
In one embodiment, a semiconductor device includes a first substrate, and a plurality of electrode layers provided above the first substrate and stacked in a first direction. The device further includes a first semiconductor layer extending in the first direction in the plurality of electrode layers, and a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction. The device further includes a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer.
Claims12
A semiconductor device of comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate and stacked in a first direction;
- a first semiconductor layer extending in the first direction in the plurality of electrode layers;
- a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction;
- and
- a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- the device comprising, as the first semiconductor layer, a plurality of first semiconductor layers provided in an array in an in-plane direction of the plurality of electrode layers,
- wherein the second semiconductor layer is electrically connected to each of the plurality of first semiconductor layers.
5 more elements
A semiconductor device comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate and stacked in a first direction;
- a first semiconductor layer extending in the first direction in the plurality of electrode layers;
- a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction;
- and
- a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- wherein the metal layer annularly surrounds the second semiconductor layer.
4 more elements
A semiconductor device comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate and stacked in a first direction;
- a first semiconductor layer extending in the first direction in the plurality of electrode layers;
- a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction;
- and
- a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- wherein the second semiconductor layer annularly surrounds the first semiconductor layer.
4 more elements
A semiconductor device comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate and stacked in a first direction;
- a first semiconductor layer extending in the first direction in the plurality of electrode layers;
- a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction;
- and
- a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- wherein
- the first semiconductor layer includes a first portion provided around a side face of a first insulator, and a second portion provided on the first insulator and the first portion;
- and
- the second semiconductor layer is provided on the second portion.
7 more elements
A semiconductor device comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate, stacked to be spaced away from one another in a first direction that crosses a surface of the first substrate, and extending orthogonal to the first direction;
- a first semiconductor layer provided in the plurality of electrode layers, and extending in the first direction;
- and
- a second semiconductor layer provided around the first semiconductor layer to form an annular shape, electrically connected to the first semiconductor layer, and having an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- the device comprising, as the first semiconductor layer, a plurality of first semiconductor layers provided in an array in an in-plane direction of the plurality of electrode layers,
- wherein the second semiconductor layer is electrically connected to each of the plurality of first semiconductor layers.
4 more elements
A semiconductor device comprising:
- a first substrate;
- a plurality of electrode layers provided above the first substrate, stacked to be spaced away from one another in a first direction that crosses a surface of the first substrate, and extending orthogonal to the first direction;
- a first semiconductor layer provided in the plurality of electrode layers, and extending in the first direction;
- and
- a second semiconductor layer provided around the first semiconductor layer to form an annular shape, electrically connected to the first semiconductor layer, and having an impurity concentration higher than an impurity concentration of the first semiconductor layer,
- wherein the second semiconductor layer annularly surrounds the first semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.