US 11,107,801 B2Granted

Multi fan-out package structure and method for forming the same

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsShin-Puu Jeng, Po-Yao Lin, Shuo-Mao Chen, Feng-Cheng Hsu, Chia-Hsiang Lin

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Abstract

A package structure and method for forming the same are provided. The package structure includes a first redistribution structure formed over a substrate, and the first redistribution structure includes a first conductive line, a second conductive line and a first overlapping conductive line between the first conductive line and the second conductive line. The first conductive line has a first width, the second conductive line which is parallel to the first conductive line has a second width, and the overlapping conductive line has a third width which is greater than the first width and the second width. The package structure includes a first package unit formed over the first redistribution structure, and the first package unit includes a first semiconductor die and a first die stack, and the first semiconductor die has a different function than the first die stack.

Claims20

Dependent claims

A method for forming a package structure, comprising:

forming a dielectric layer over a carrier substrate, wherein the carrier substrate comprises a first region, a second region and a third region between the first region and the second region;
forming a photoresist layer over the dielectric layer;
performing a first exposure process on the photoresist layer to form a first single exposed region;
performing a second exposure process on the photoresist layer to form a second single exposed region and a double exposed region, wherein a width of the double exposed region is greater than a width of the first single exposed region;
developing the photoresist layer to form a patterned photoresist layer;
patterning the dielectric layer to form a trench by using the patterned photoresist layer as a mask;
forming a conductive layer in the trench in the dielectric layer, wherein the conductive layer comprises a first conductive line in the first region, a second conductive line in the second region and an overlapping conductive line in the third region, and a third width of the overlapping conductive line is wider than a first width of the first conductive line of the conductive layer;
and
disposing a semiconductor die and a die stack over the conductive layer, wherein the semiconductor die has a different function than the die stack.

6 more elements

A method for forming a package structure, comprising:

forming a dielectric layer over a carrier substrate, wherein the carrier substrate comprises a first region, a second region and a third region between the first region and the second region;
forming a photoresist layer over the dielectric layer, wherein the photoresist layer comprises a first portion in the first region, a second portion in the second region and a third portion in the third region;
disposing a first mask over the first region and the third region;
performing a first exposure process on the first portion and the third portion of the photoresist layer;
disposing a second mask over the second region and the third region;
performing a second exposure process on the second portion and the third portion of the photoresist layer, wherein the third portion of the photoresist layer is a first overlapping portion which is exposed twice;
developing the photoresist layer to form a patterned photoresist layer;
patterning the dielectric layer to form a trench;
forming a first redistribution structure in the trench in the dielectric layer, wherein the first redistribution structure comprises a first conductive line in the first region and an overlapping conductive line in the third region, a third width of the overlapping conductive line is greater than a first width of the first conductive line;
forming a first package unit over the first redistribution structure, wherein the first package unit comprises a first semiconductor die and a first die stack, and the first semiconductor die has a different function than the first die stack;
forming a package layer over the first package unit;
removing the carrier substrate;
and
forming a package substrate below the first redistribution structure.

11 more elements

A method for forming a package structure, comprising:

forming a dielectric layer over a carrier substrate, wherein the carrier substrate comprises a first region, a second region and a third region between the first region and the second region;
forming a photoresist layer over the dielectric layer;
performing a first exposure process on the photoresist layer to expose a first portion of the photo resist layer and an overlapping portion of the photoresist layer;
performing a second exposure process on the photoresist layer to expose a second portion of the photo resist layer and the overlapping portion of the photoresist layer, wherein the overlapping portion is positioned between the first portion and the second portion;
developing the photoresist layer to form a patterned photoresist layer;
patterning the dielectric layer to form a trench positioned above the first region, the second region, and the third region;
forming a conductive layer in the trench in the dielectric layer, wherein the conductive layer comprises a first conductive line in the first region, and an overlapping conductive line in the third region, and a third width of the overlapping conductive line is wider than a first width of the first conductive line of the conductive layer;
and
disposing a semiconductor die and a die stack over the conductive layer, wherein the semiconductor die has a different function than the die stack.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/233,653Filed 27 Dec 2018 · us provisional application
Priority: 29 Aug 2018
Published: US 2020/0075569 A15 Mar 2020
Granted: 31 Aug 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification34 codes

G03F 7/203
Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal;…:…
H10W 90/00
Package configurations
G03F 7/2022
Exposure; Apparatus therefor: multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g.…
H10P 14/61
Of insulating materials: using masks