Method for manufacturing semiconductor device
AssigneeMitsui Chemicals Tohcello, Inc.
InventorEiji Hayashishita
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device according to the present invention includes at least the following three steps: (A) a step of preparing a first structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and a first semiconductor component (60) adhered to the adhesive resin layer (30) and having a first terminal (65); (B) a step of performing solder reflow processing on the first structure (100) in a state where the first semiconductor component (60) is adhered to the adhesive resin layer (30); and (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50).
Claims16
A method for manufacturing a semiconductor device comprising:
- (A) a step of preparing a first structure including an adhesive laminate film having a heat-resistant resin layer, a flexible resin layer and an adhesive resin layer in this order, and a first semiconductor component adhered to the adhesive resin layer and having a first terminal;
- (B) a step of performing solder reflow processing on the first structure in a state where the first semiconductor component is adhered to the adhesive resin layer;
- and
- (C) a step of, after the step (B), peeling the heat-resistant resin layer from the adhesive laminate film.
Dependencies are inferred from the claim text.