Method of manufacturing semiconductor device
AssigneeToshiba Memory Corporation
InventorMasaya Shima
Life of this patent
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AssigneeToshiba Memory Corporation
InventorMasaya Shima
Estimating the term…
According to one embodiment, a method of manufacturing a semiconductor device includes: forming a semiconductor feature on a first surface of a substrate; forming a first insulating film on the semiconductor feature; forming a first wiring layer on the first insulating film; forming a second insulating film on the first wiring layer; forming a second wiring layer on the second insulating film; forming a first electrode on the second wiring layer; providing a protective adhesive that covers the first electrode and the second wiring layer; bonding a supporting substrate onto the protective adhesive; polishing a second surface of the substrate opposite to the first surface; removing the supporting substrate from the protective adhesive; and removing at least a portion of the protective adhesive to expose the first electrode.
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor package, comprising:
Dependencies are inferred from the claim text.