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AssigneeIntel Corporation
InventorsCharles H. Wallace, Hossam A. Abdallah, Elliot N. Tan, Swaminathan Sivakumar, Oleg Golonzka, Robert M. Bigwood
Estimating the term…
Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.
A two-dimensional photoresist feature, comprising:
A method comprising:
A two-dimensional photoresist feature, comprising:
Dependencies are inferred from the claim text.