US 11,107,775 B1Granted

Semiconductor device with electrically floating contacts between signal-transmitting contacts

AssigneeNanya Technology Corporation

InventorTse-Yao Huang

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Abstract

The present disclosure provides a semiconductor device including a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure. The first connecting structure includes a plurality of first connecting contacts and a plurality of first supporting contacts positioned in a first connecting insulating layer. The second connecting structure includes a plurality of second connecting contacts and a plurality of second supporting contacts positioned in the second connecting insulating layer positioned on the first connecting structure. The plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts. The plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts for implementing electro-magnetic interference shielding between the signal-transmitting contacts.

Claims17

Dependent claims

A semiconductor device, comprising:

a first semiconductor structure and a first connecting structure positioned on the first semiconductor structure, wherein the first connecting structure comprises a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer;
a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure, wherein the second connecting structure comprises a second connecting insulating layer positioned on the first connecting structure, a plurality of second connecting contacts positioned in the second connecting insulating layer, and a plurality of second supporting contacts positioned in the second connecting insulating layer;
wherein the plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts;
and
wherein the plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts between the signal-transmitting contacts;
wherein a top surface of the first connecting insulating layer, top surfaces of the plurality of first connecting contacts, and top surfaces of the plurality of first supporting contacts are substantially coplanar;
and bottom surfaces of the plurality of first connecting contacts contact a top surface of the first semiconductor structure;
wherein the plurality of first connecting contacts have a thickness greater than a thickness of the plurality of first supporting contacts;
wherein the first semiconductor structure comprises a first substrate positioned below the first connecting structure and a first interconnection structure positioned between the first substrate and the first connecting structure, wherein the first connecting insulating layer is positioned on the first interconnection structure.

6 more elements

A semiconductor device, comprising:

a first semiconductor structure and a first connecting structure positioned on the first semiconductor structure, wherein the first connecting structure comprises a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer;
a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure, wherein the second connecting structure comprises a second connecting insulating layer positioned on the first connecting structure, a plurality of second connecting contacts positioned in the second connecting insulating layer, and a plurality of second supporting contacts positioned in the second connecting insulating layer;
wherein the plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts;
and
wherein the plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts between the signal-transmitting contacts;
wherein the first connecting insulating layer comprises a first bottom insulating layer positioned on the top surface of the first semiconductor structure, a first middle insulating layer positioned on the first bottom insulating layer, and a first top insulating layer positioned on the first middle insulating layer, wherein the plurality of first connecting contacts penetrate the first bottom insulating layer, the first middle insulating layer, and the first top insulating layer, and the plurality of first supporting contacts are positioned in the first top insulating layer.

3 more elements

Dependencies are inferred from the claim text.