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US 11,107,766 B2Granted
Substrate with embedded stacked through-silicon via die
AssigneeIntel Corporation
InventorsJavier Soto Gonzalez, Houssam Jomaa
Life of this patent
Estimating the term…
Abstract
A substrate with an embedded stacked through-silicon via die is described. For example, an apparatus includes a first die and a second die. The second die has one or more through-silicon vias disposed therein (TSV die). The first die is electrically coupled to the TSV die through the one or more through-silicon vias. The apparatus also includes a coreless substrate. Both the first die and the TSV die are embedded in the coreless substrate.
Claims14
A process, comprising:
- bonding a backside of a first die to a panel with a die-bonding film;
- coupling a backside of a second die to a device side of the first die, the second die including one or more through-silicon vias disposed therein, the coupling through the one or more through-silicon vias;
- forming an encapsulation layer above a device side of the second die, the encapsulation layer surrounding the first die and the second die;
- forming a first plurality of apertures in the encapsulation layer, the first plurality of apertures extending from a first side of the encapsulation layer to a second side of the encapsulation layer, the first plurality of apertures outside a periphery of the first die and the second die, and the first plurality of apertures laterally adjacent to both the first die and the second die;
- forming a second plurality of apertures in the encapsulation layer, the second plurality of apertures exposing the second die;
- forming corresponding ones of a first plurality of conductive vias in corresponding ones of the first plurality of apertures;
- forming corresponding ones of a second plurality of conductive vias in corresponding ones of the second plurality of apertures;
- and
- subsequent to forming the first plurality of conductive vias and the second plurality of conductive vias, removing the panel from the die-bonding film.
6 more elements
A method of fabricating a semiconductor package, the method comprising:
- providing a first die and a second die, the second die including one or more through-silicon vias disposed therein;
- electrically coupling the second die to the first die through the one or more through-silicon vias;
- and
- embedding the first die and the second die in a coreless substrate, the coreless substrate comprising a land side and a die side, wherein the first die protrudes from a global planarity surface of the die side of the coreless substrate, wherein the coreless substrate comprises an encapsulation layer, and wherein both the first die and the second die are embedded in the encapsulation layer;
- forming a first plurality of apertures in the encapsulation layer, the first plurality of apertures extending from a first side of the encapsulation layer to a second side of the encapsulation layer, the first plurality of apertures outside a periphery of the first die and the second die, and the first plurality of apertures laterally adjacent to both the first die and the second die;
- forming a second plurality of apertures in the encapsulation layer, the second plurality of apertures exposing the second die;
- forming corresponding ones of a first plurality of conductive vias in corresponding ones of the first plurality of apertures;
- and
- forming corresponding ones of a second plurality of conductive vias in corresponding ones of the second plurality of apertures.
6 more elements
A method of fabricating a semiconductor package, the method comprising:
- providing a first die and a die-bonding film disposed on and entirely covering a back surface of the first die, but not extending beyond the back surface of the first die, wherein a surface of the die-bonding film is an exposed surface;
- providing a second die including one or more through-silicon vias disposed therein, the first die electrically coupled to the second die through the one or more through-silicon vias,
- electrically coupling the first die to the second die through the one or more through-silicon vias by one or more corresponding conductive bumps disposed on the first die and by one or more bond pads disposed on the second die;
- forming a layer of epoxy flux material between the first die and the second die, the layer of epoxy flux material surrounding the one or more corresponding conductive bumps disposed on the first die;
- embedding the first die and the second die in a coreless substrate, wherein no surface of the first die and the die-bonding film protrudes from a surface of the coreless substrate, and wherein the coreless substrate comprises a continuous encapsulation layer laterally surrounding both the first die and the second die;
- forming a first plurality of apertures in the encapsulation layer, the first plurality of apertures extending from a first side of the encapsulation layer to a second side of the encapsulation layer, the first plurality of apertures outside a periphery of the first die and the second die, the first plurality of apertures laterally adjacent to both the first die and the second die;
- forming a second plurality of apertures in the encapsulation layer, the second plurality of apertures exposing the second die;
- forming corresponding ones of a first plurality of conductive vias in corresponding ones of the first plurality of apertures;
- forming corresponding ones of a second plurality of conductive vias in corresponding ones of the second plurality of apertures;
- forming a plurality of conductive contacts on the surface of the coreless substrate, wherein the plurality of conductive contacts is above the second die and the second die is above the first die and the die-bonding film;
- and
- attaching a packaged die to the corresponding pads of the one or more conductive vias.
9 more elements
Dependencies are inferred from the claim text.