Group III-V semiconductor fuses and their methods of fabrication

An integrated circuit structure comprising:

• a fuse comprising:
• a gallium nitride layer on a substrate;
• an oxide layer disposed in a trench in the gallium nitride layer;
• a first contact on the gallium nitride layer on a first side of the trench, the first contact comprising indium, gallium and nitrogen;
• a second contact on the gallium nitride layer on a second side of the trench, the second side opposite the first side, the second contact comprising indium, gallium and nitrogen;
• and
• a filament over the oxide layer in the trench, the filament coupled to the first contact and to the second contact wherein the filament comprises indium, gallium and nitrogen;
• and
• a transistor comprising:
• a polarization layer on the gallium nitride layer;
• a gate structure on the on the polarization layer;
• a source region on the gallium nitride layer on a first side of the gate structure, the source region comprising indium, gallium and nitrogen;
• a drain region on the gallium nitride layer on a second side of the gate structure, the second side opposite the first side, the drain region comprising indium, gallium and nitrogen.

A method of forming a fuse comprising:

• forming a trench in a gallium nitride layer on a substrate;
• filling the trench with an oxide layer;
• forming a first contact layer on the gallium nitride layer on a first side of the trench, and forming a second contact layer on the gallium nitride layer on a second side of the trench, the second side opposite the first side, wherein the first contact and the second contact comprise indium, gallium and nitrogen;
• and
• forming a filament above the oxide layer, the filament in contact with the first contact and the second contact, wherein the filament comprises indium, gallium and nitrogen.

A fuse comprising:

• a first III-V semiconductor layer on a substrate;
• an oxide layer disposed in a trench in the first III-V semiconductor layer;
• a first contact on the first III-V semiconductor layer on a first side of the trench, the first contact comprising a second III-V semiconductor layer;
• a second contact on the first III-V semiconductor layer on a second side of the trench, the second side opposite the first side, the second contact comprising the second III-V semiconductor layer;
• and
• a filament over the oxide layer in the trench, the filament coupled to the first contact and to the second contact wherein the filament comprises the second III-V semiconductor layer.