Semiconductor package with composite thermal interface material structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Liang Shao, Jen-Yu Wang, Chung-Jung Wu, Chih-Hang Tung, Chen-Hua Yu
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Abstract
A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.
Claims20
A semiconductor package, comprising:
- a substrate;
- a semiconductor die over the substrate;
- a heat-dissipating feature over the substrate and covering the semiconductor die;
- and
- a composite thermal interface material (TIM) structure thermally bonded between the semiconductor die and the heat-dissipating feature, comprising:
- a metal-containing matrix material layer;
- a plurality of polymer particles embedded in the metal-containing matrix material layer;
- and
- a plurality of metal covers respectively surrounding the plurality of polymer particles, wherein each of the plurality of metal covers comprises a first layer and a second layer surrounding the first layer, and each of the plurality of metal covers is surrounded by a solder material layer.
A semiconductor package, comprising:
- a heat spreader lid;
- a first semiconductor die having an upper surface covered by the heat spreader lid, wherein the upper surface of the first semiconductor die has at least one hot spot region and a region outside of the hot spot region;
- a bonding layer thermally connected between the first semiconductor die and the heat spreader lid;
- and
- a plurality of core-shell structures formed in the bonding layer, wherein each of the plurality of core-shell structures comprises a polymer core and a metal shell,
- wherein a density of the plurality of core-shell structures above the hot spot region is greater than the density of the plurality of core-shell structures above the region outside of the hot spot region, and
- wherein the metal shell of each of the plurality of core-shell structures comprises a first layer and a second layer surrounding the first layer, and the metal shell of each of the plurality of core-shell structures is surrounded by a solder material layer.
A semiconductor package, comprising:
- a substrate;
- an interposer formed over and electrically connected to the substrate;
- a first semiconductor die and a second semiconductor die formed over and electrically connected to the interposer;
- a heat-dissipating feature connected to the substrate and capping the first semiconductor die, the second semiconductor die, and the interposer;
- a metal-containing matrix material layer thermally bonded between the first and second semiconductor dies and the heat-dissipating feature;
- and
- a plurality of polymer particles embedded in the metal-containing matrix material layer, wherein the each of the plurality of polymer particles is surrounded by a first metal layer and the first metal layer is surrounded by a second metal layer, and the first metal layer and the second metal layer are surrounded by a solder material layer.
Dependencies are inferred from the claim text.