Power semiconductor apparatus and manufacturing method therefor

A manufacturing method for a power semiconductor apparatus comprising:

• preparing a lead frame including an inner lead, an outer lead connected to the inner lead, and a power die pad;
• bonding a power semiconductor device onto the power die pad;
• electrically connecting the inner lead and the power semiconductor device via a first metal thin line;
• making a first metal die pin to project out from a first sliding part of an upper metal die to come into contact with an upper surface of the power die pad, sandwiching the lead frame by the upper metal die and a lower metal die, filling an insulating section directly beneath the power die pad and the upper metal die with sealing resin from an under surface of the power die pad through compression molding to seal the inner lead, the power die pad, the power semiconductor device and the first metal thin line;
• and
• pulling out the first metal die pin, deaerating a volatile content existing between the upper metal die and the lower metal die through the first sliding part, and curing the sealing resin,
• wherein first sealing resin and second sealing resin are supplied as the sealing resin, the second sealing resin being supplied onto the first sealing resin and having a lower concentration of inorganic particles than the first sealing resin,
• the first sealing resin is provided up to the upper surface of the power die pad and is not provided above an upper surface of the power semiconductor device, and
• the second sealing resin is in direct contact with the upper surface of the power die pad.