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US 11,107,745 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsYasuyuki Sanda, Dai Nakajima, Haruna Tada, Hodaka Rokubuichi, Kiyofumi Kitai
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Abstract
A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.
Claims13
A semiconductor device comprising a power module unit, a fin base, and a radiator fin,
- the power module unit including:
- a module base,
- a lead frame disposed on a surface of the module base, with an insulating sheet interposed between the lead frame and the surface of the module base,
- a power semiconductor element mounted on a surface of the lead frame, and
- a mold resin sealing the power semiconductor element,
- the fin base including:
- a heat radiation diffusion portion fitted with the radiator fin, and
- a base portion formed on the heat diffusion portion, the module base being joined to the base portion,
- the heat radiation diffusion portion being larger in cross-sectional area than the module base.
6 more elements
Dependencies are inferred from the claim text.