Insulated gate bipolar transistor module and manufacturing method thereof

A method for manufacturing an IGBT module, comprising:

• manufacturing a heat dissipation base plate having a top surface and a bottom surface, embedding a first ceramic heat dissipation element in the heat dissipation base plate between the top and bottom surfaces, and forming a first wiring layer on the top surface of the heat dissipation base plate;
• mounting a first side of an IGBT chip onto a heat conductive metal plate, and mounting a second side of the IGBT chip onto the first wiring layer, wherein two opposite surfaces of the IGBT chip are respectively mounted onto the heat conductive metal plate and the first wiring layer;
• providing a first through hole in a first heat dissipation plate and positioning a first prepreg on the first wiring layer and providing the heat conductive metal plate in the first through hole;
• laminating the first heat dissipation plate and the first prepreg with the heat dissipation base plate;
• electroplating a first metal layer onto the first heat dissipation plate and the heat conductive metal plate;
• and etching the first metal layer to form a second wiring layer, thereby forming an intermediate product;
• mounting a second ceramic heat dissipation element onto the second wiring layer,
• providing a second through hole in a second heat dissipation plate;
• positioning a second prepreg and the second heat dissipating plate on the second wiring layer, and providing the second ceramic heat dissipation element in the second through hole;
• laminating the intermediate product and the second prepreg with the second ceramic heat dissipation element, and electroplating a second metal layer onto the second heat dissipation plate and the second ceramic heat dissipation element;
• and etching the second metal layer to form a third wiring layer.