Methods of forming epitaxial structures in fin-like field effect transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
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Abstract
A method of fabricating a fin-like field effect transistor (FinFET) device includes providing a semiconductor substrate having a region for forming p-type metal-oxide-semiconductor (PMOS) devices and a region for forming n-type metal-oxide-semiconductor (PMOS) devices, forming fin structures in both regions of the substrate separated by isolation features, first forming source/drain (S/D) features in the PMOS region, and subsequently forming S/D features in the NMOS region. First forming the PMOS S/D features and then forming the NMOS S/D features results in a greater extent of loss of isolation features in the PMOS region than in the NMOS region.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate having a first region for forming p-type metal-oxide-semiconductor (PMOS) devices and a second region for forming n-type metal-oxide-semiconductor (NMOS) devices;
- a first source/drain feature over a first fin structure in the first region, the first source/drain feature being a p-type source/drain feature;
- a second source/drain feature over a second fin structure in the second region, the second source/drain feature being an n-type source/drain feature;
- and
- isolation features between the first source/drain feature and the second source/drain feature, the isolation features including a first portion adjacent to the first source/drain feature, a second portion adjacent to the second source/drain feature, and a third portion between the first portion and the second portion, wherein a width of the first portion is greater than a width of the second portion.
A semiconductor structure, comprising:
- a first fin structure disposed in a first region of a semiconductor substrate for forming a p-type metal-oxide-semiconductor (PMOS) device;
- a p-type source/drain (S/D) feature disposed on a top surface of the first fin structure;
- a second fin structure disposed in a second region of the semiconductor substrate for forming an n-type metal-oxide-semiconductor (NMOS) device, wherein the second region is adjacent to the first region, and wherein a top surface of the second fin structure is above the top surface of the first fin structure;
- an n-type S/D feature disposed on the top surface of the second fin structure;
- and
- a dielectric layer disposed between bottom portions of the first fin structure from the second fin structure, wherein a height of the dielectric layer decreases from a middle portion of the dielectric layer toward the first fin structure and the second fin structure, respectively.
A semiconductor structure, comprising:
- a semiconductor substrate;
- a first fin structure disposed over the semiconductor substrate;
- a first source/drain (S/D) feature disposed on the first fin structure, wherein the first S/D feature is a p-type S/D feature;
- a second fin structure disposed over the semiconductor substrate and adjacent to the first fin structure;
- a second S/D feature disposed on the second fin structure, wherein the second S/D feature is an n-type S/D feature;
- and
- an isolation structure separating the first and the second fin structures, wherein the isolation structure includes a first region surrounding the first fin structure, a second region surrounding the second fin structure, and an island region disposed between the first and the second regions, and wherein a lowest point of the first region is below a lowest point of the second region.
Dependencies are inferred from the claim text.