Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

A method for forming a plurality of thin wide band gap semiconductor wafers, the method comprising:

• depositing a first non-monocrystalline support layer comprising semiconductor material on a wide band gap semiconductor boule, the wide band gap semiconductor boule having a band gap larger than the band gap of silicon;
• separating the wide band gap semiconductor boule along a first separating region to obtain a first thin wide band gap semiconductor wafer and a first remaining wide band gap semiconductor boule, the first thin wide band gap semiconductor wafer comprising the first non-monocrystalline support layer and a thin wide band gap semiconductor layer, a thickness of the wide band gap semiconductor boule being at least 2 times a thickness of the thin wide band gap semiconductor layer;
• depositing a second non-monocrystalline support layer on the first remaining wide band gap semiconductor boule;
• and
• separating the first remaining wide band gap semiconductor boule along a second separating region to obtain a second thin wide band gap semiconductor wafer and a second remaining wide band gap semiconductor boule, the second thin wide band gap semiconductor wafer comprising the second non-monocrystalline support layer and a thin wide band gap semiconductor layer.