Method of manufacturing semiconductor device with anti-fuse structures
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure including following operations is provided. A substrate extending along a first direction is provided. A trench crossing the substrate is then formed to define a first active region and a second active region. A lower isolation structure is formed in the trench, in which the lower isolation structure exposes a portion of a sidewall of the substrate. The exposed sidewall of the substrate is oxidized to form an upper isolation structure on the lower isolation structure, in which the upper isolation structure extends into the substrate. A conductive structure embedded in the upper isolation structure is formed. A first transistor and a second transistor are respectively formed in the first active region and the second active region.
Claims10
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate extending along a first direction;
- forming a trench crossing the substrate to define a first active region and a second active region;
- forming a lower isolation structure in the trench, wherein the lower isolation structure exposes a portion of a sidewall of the substrate;
- oxidizing the exposed sidewall of the substrate to form an upper isolation structure on the lower isolation structure, wherein the upper isolation structure extends into the substrate;
- forming a conductive structure embedded in the upper isolation structure;
- and
- forming a first transistor and a second transistor respectively in the first active region and the second active region.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of active regions extending along a first direction, wherein the active regions are separated from each other by a shallow trench isolation (STI) structure;
- forming a trench crossing the active regions and the STI structures;
- forming an anti-fuse structure in the trench, wherein the anti-fuse structure comprises an isolation structure covering the trench and an conductive structure embedded in the isolation structure;
- and
- forming a transistor in each of the active regions, wherein the transistor is separated from the conductive structure by the isolation structure.
Dependencies are inferred from the claim text.