Double metal double patterning with vias extending into dielectric
AssigneeInternational Business Machines Corporation
InventorsYann Mignot, Hsueh-Chung Chen
Life of this patent
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Abstract
A method is presented for constructing a dual metal interconnect structure. The method includes forming a trilayer stack over a dielectric layer, forming a plurality of vias extending through the trilayer stack and into the dielectric layer, depositing a first conductive material to fill the plurality of vias, etching the first conductive material to form first conductive regions, depositing a spacer, etching the spacer to form spacer portions adjacent the first conductive regions, and depositing a second conductive material.
Claims17
A method for constructing a dual metal interconnect structure, the method comprising:
- forming a trilayer stack over a dielectric layer;
- forming a plurality of vias extending through the trilayer stack and into the dielectric layer;
- depositing a first conductive material to fill the plurality of vias;
- etching the first conductive material to form first conductive regions;
- depositing a spacer after formation of the first conductive regions;
- etching the spacer deposited after the formation of the first conductive regions to define spacer portions therefrom adjacent the first conductive regions;
- and
- depositing a second conductive material.
A method for constructing a dual damascene structure, the method comprising:
- forming a first trilayer stack over a dielectric layer;
- forming a plurality of first vias extending through the first trilayer stack and into the dielectric layer;
- depositing a first conductive material to fill the plurality of first vias;
- etching the first conductive material to form first conductive regions;
- depositing a spacer after formation of the first conductive regions;
- etching the spacer deposited after the formation of the first conductive regions to define spacer portions therefrom adjacent the first conductive regions;
- forming a second trilayer stack;
- forming a plurality of second vias extending through the second trilayer stack and into the dielectric layer;
- and
- depositing a second conductive material to fill the plurality of second vias.
Dependencies are inferred from the claim text.