Method for manufacturing bonding pad in semiconductor device

A method for manufacturing a bonding pad in a semiconductor device, comprising:

• providing a substrate, wherein a cover layer of a dielectric material is formed on the substrate, a wiring layer is formed in the cover layer, a layer to be etched is formed on the cover layer, and the layer to be etched comprises an adhesive layer;
• forming an exposure patterned film layer on the layer to be etched and performing a photolithography process to form a first etching hole pattern in the exposure patterned film layer;
• performing a first etching process on the layer to be etched to form a blind hole in the layer to be etched by using the exposure patterned film layer as a mask;
• trimming the exposure patterned film layer to expand the first etching hole pattern to form a second etching hole pattern;
• performing a second etching process on the layer to be etched to form a bonding hole by using the trimmed exposure patterned film layer as a mask, wherein the bonding hole comprises a bottom via hole and an upper via hole, the bottom via hole is formed by using the blind hole and extends to the wiring layer, the upper via hole extends through a part of thickness of the layer to be etched and is formed in the layer to be etched between the bottom via hole and the second etching hole pattern;
• and
• forming a bonding pad in the bonding hole;
• wherein the adhesive layer comprise a first adhesive lever and a second adhesive layer on the first adhesive layer, and the layer to be etched further comprises a protective layer on the second adhesive layer;
• wherein a diffusion stop layer is formed between the first adhesive layer and the cover layer;
• wherein after the first etching process, the blind hole extends through the protective layer, and extends through a part of thickness of the second adhesive layer;
• and
• wherein the second etching process comprises:
• transferring the second etching hole pattern to the protective layer;
• etching the second adhesive layer until the blind hole extends to the first adhesive layer, and forming an upper opening extending through a part of thickness of the second adhesive layer around the blind hole;
• etching the first adhesive layer under the blind hole until the blind hole extends to the diffusion stop layer;
• and
• etching the second adhesive layer under the upper opening to form the upper via hole, and etching the diffusion stop layer under the blind hole to form the bottom via hole.