Gas phase etching device and gas phase etching apparatus
AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorsJun Zhang, Zhenguo Ma, Xin Wu, Lihui Wen, Yunlong Hu, Henan Zhang, Fuping Chu
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AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorsJun Zhang, Zhenguo Ma, Xin Wu, Lihui Wen, Yunlong Hu, Henan Zhang, Fuping Chu
Estimating the term…
Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.
A gas phase etching device comprising:
A gas phase etching apparatus, comprising:
Dependencies are inferred from the claim text.