Implantation for etch stop liner
AssigneeXilinx, Inc.
InventorsLi-Wen Chang, Ping-Chin Yeh
Life of this patent
Estimating the term…
Abstract
Examples described herein provide for methods for semiconductor processing for forming source/drain regions of transistors. An example is a method for semiconductor processing. An etch stop liner is formed in a semiconductor substrate. Forming the etch stop liner includes implanting etch selectivity dopants into the semiconductor substrate. The etch selectivity dopants form at least part of the etch stop liner. A source/drain cavity is formed in the semiconductor substrate. Forming the source/drain cavity includes etching the etch stop liner. Etching the etch stop liner selectively etches the etch stop liner relative to a material of the semiconductor substrate. A source/drain region is epitaxially grown in the source/drain cavity.
Claims17
A method for semiconductor processing, the method comprising:
- forming an etch stop liner in a semiconductor substrate comprising implanting etch selectivity dopants into the semiconductor substrate, the etch selectivity dopants forming at least part of the etch stop liner;
- forming a source/drain cavity in the semiconductor substrate comprising etching the etch stop liner, wherein etching the etch stop liner selectively etches the etch stop liner relative to a material of the semiconductor substrate;
- and
- epitaxially growing a source/drain region in the source/drain cavity, wherein forming the source/drain cavity in the semiconductor substrate further comprises etching the material of the semiconductor substrate above the etch stop liner, wherein etching the material of the semiconductor substrate selectively etches the material of the semiconductor substrate relative to the etch stop liner.
A method for semiconductor processing, the method comprising:
- forming a gate structure on a semiconductor substrate;
- implanting etch selectivity dopants into the semiconductor substrate on opposing sides of the gate structure, the etch selectivity dopants forming at least part of respective etch stop liners in the semiconductor substrate on the opposing sides of the gate structure;
- etching the etch stop liners to define surfaces of cavities in the semiconductor substrate on the opposing sides of the gate structure;
- epitaxially growing a source/drain region in each of the cavities;
- and
- etching a material of the semiconductor substrate above the etch stop liners before etching the etch stop liners, wherein etching the material of the semiconductor substrate selectively etches the material of the semiconductor substrate relative to the etch stop liners, and etching the etch stop liners selectively etches the etch stop liners relative to the material of the semiconductor substrate.
A method for semiconductor processing, the method comprising:
- forming a gate structure on a semiconductor substrate;
- forming a gate spacer along a sidewall of the gate structure and on the semiconductor substrate;
- implanting oxygen into the semiconductor substrate, the implanted oxygen extending to be at least partially directly under the gate spacer;
- reacting the oxygen with a material of the semiconductor substrate to form an etch stop liner, reacting the oxygen with the material of the semiconductor substrate comprising performing an anneal;
- etching the material of the semiconductor substrate above the etch stop liner, wherein etching the material of the semiconductor substrate selectively etches the material of the semiconductor substrate relative to the etch stop liner;
- after etching the material of the semiconductor substrate, removing the etch stop liner comprising etching the etch stop liner, etching the etch stop liner selectively etches the etch stop liner relative to the material of the semiconductor substrate;
- and
- epitaxially growing an epitaxial material where the etch stop liner was removed;
- wherein implanting the oxygen comprises performing a tilt implant to implant the oxygen at least partially directly under the gate spacer.
Dependencies are inferred from the claim text.