Method for high aspect ratio photoresist removal in pure reducing plasma

A method for processing a substrate comprising a TiN liner having holes with an aspect ratio of at least 50 and a photoresist layer, the method comprising:

• placing the substrate in a processing chamber, the processing chamber located downstream from a plasma chamber;
• generating a first non-oxidizing plasma from a first process gas in the plasma chamber, the first process gas comprising a first carrier gas and a first reactant gas, wherein the first process gas comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas comprises NH3 and the first carrier gas comprises N2;
• exposing the substrate to species of the first non-oxidizing plasma in the processing chamber to implement a strip process for removal of at least a portion of the photoresist layer;
• generating a second non-oxidizing plasma from a second process gas in the plasma chamber, the second process gas comprising a second carrier gas and a second reactant gas, wherein the second process gas comprises from about 10% to about 40% of the second reactant gas, wherein the second reactant gas comprises H2 and the second carrier gas comprises Ar;
• exposing the substrate to species of the second non-oxidizing plasma in the processing chamber to implement a post-strip treatment process on the substrate.