Method of manufacturing semiconductor device
AssigneeDenso Corporation
InventorsToru Ikeda, Tomohiko Mori, Narumasa Soejima, Hideya Yamadera
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.
Claims3
A method for manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate constituted of a group III nitride semiconductor and including a p-type body region, a main surface of the semiconductor substrate being a c-plane;
- forming a groove on the main surface by dry-etching the main surface;
- and
- wet-etching an inner surface of the groove using an etchant to expose the c-plane including the body region in a wet-etched region, the etchant having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate;
- forming an n-type source region and an n-type drain region in the semiconductor substrate such that the c-plane exposed by the wet etching includes the source region and the drain region, and the body region is located between the source region and the drain region on the c-plane exposed by the wet etching;
- and
- forming a gate electrode at a position facing an area between the source region and the drain region of the c-plane exposed by the wet etching.
Dependencies are inferred from the claim text.