Fin field-effect transistor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Hsiu Hung, Chien Chang, Yi-Hsiang Chao, Hung-Yi Huang, Chih-Wei Chang
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Abstract
A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming source/drain regions on opposing sides of a gate structure, wherein the gate structure is over a fin and surrounded by a first dielectric layer;
- forming openings in the first dielectric layer to expose the source/drain regions;
- selectively forming silicide regions in the openings on the source/drain regions by performing a plasma-enhanced chemical vapor deposition (PECVD) process, wherein the PECVD process uses an RF source for generating plasmas, wherein performing the PECVD process comprises tuning an average energy of the plasmas in the PECVD process to be above a first activation energy for forming the silicide regions on the source/drain regions and below a second activation energy for forming the silicide regions on the first dielectric layer, wherein the PECVD process forms the silicide regions at bottoms of the openings on the source/drain regions but does not form a material along sidewalls of the openings;
- and
- filling the openings with an electrically conductive material.
A method of forming a semiconductor device, the method comprising:
- determine a first activation energy for forming a third material on a first material of a semiconductor structure;
- determine a second activation energy for forming the third material on a second material of the semiconductor structure, the second activation energy being higher than the first activation energy;
- and
- selectively depositing the third material on the first material by performing a plasma-enhanced chemical vapor deposition (PECVD) process, wherein an average energy of plasmas of the PECVD process is above the first activation energy and smaller than the second activation energy, wherein the PECVD process forms the third material on the first material but not on the second material.
A method of forming a semiconductor device, the method comprising:
- forming a dummy gate structure over a fin, the dummy gate structure being surrounded by a first dielectric layer, the first dielectric layer covering source/drain regions disposed on opposing sides of the dummy gate structure;
- replacing the dummy gate structure with a metal gate structure;
- forming openings in the first dielectric layer to expose the source/drain regions;
- selectively forming a silicide material at bottoms of the openings on the source/drain regions by performing a plasma-enhanced chemical vapor deposition (PECVD) process, wherein an RF source for the PECVD process is turned on and off periodically during the PECVD process, wherein the PECVD process covers the source/drain regions with the silicide material but exposes the first dielectric layer;
- converting an upper portion of the silicide material into a self-aligned barrier layer by supplying a nitrogen-containing gas or a nitrogen-containing plasma to the silicide material, wherein sidewalls of the openings are free of the self-aligned barrier layer;
- and
- filling the openings with a conductive material.
Dependencies are inferred from the claim text.