Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsShi-You Liu, Tsai-Yu Wen, Ming-Shiou Hsieh, Rong-Sin Lin, Ching-I Li, Neng-Hui Yang
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a pad oxide layer on the substrate, wherein the pad oxide layer comprises a first thickness; performing an implantation process to inject germanium (Ge) into the substrate on the PMOS region; performing a first cleaning process to reduce the first thickness of the pad oxide layer on the PMOS region to a second thickness; performing an anneal process; and performing a second cleaning process to remove the pad oxide layer.
Claims12
A method for fabricating semiconductor device, comprising:
- providing a substrate having a NMOS region and a PMOS region;
- forming a pad oxide layer on the substrate, wherein the pad oxide layer comprises a first thickness on the NMOS region and the PMOS region;
- performing an implantation process to inject germanium (Ge) into the substrate on the PMOS region while the pad oxide layer is on the PMOS region;
- performing a first cleaning process to thin the pad oxide layer on the PMOS region to a second thickness and the pad oxide layer on the NMOS region to a third thickness after performing the implantation process, wherein the second thickness is different than the third thickness;
- performing an anneal process after the first cleaning process, wherein the pad oxide layer on the PMOS has the second thickness and the pad oxide layer on the NMOS region has the third thickness during the anneal process;
- and
- after the anneal process, performing a second cleaning process to completely remove the pad oxide layer on the NMOS region and the PMOS region.
Dependencies are inferred from the claim text.