Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device

A semiconductor epitaxial wafer, comprising:

• a semiconductor wafer;
• a modifying layer formed in a surface portion of the semiconductor wafer, the modifying layer having hydrogen contained as a solid solution in the semiconductor wafer;
• an epitaxial layer formed directly on the modifying layer,
• wherein
• a concentration profile of the hydrogen in the modifying layer in the depth direction from a surface of the epitaxial layer is a double peak concentration profile including a first peak shallower in the depth direction and a second peak deeper in the depth direction,
• hydrogen peak concentrations of the first peak and the second peak are both 1.0×1017 atoms/cm3 or more, and
• in the depth direction, both the first peak and the second peak are in a range of at least 5 nm or more and no greater than 500 nm from an interface between the semiconductor wafer and the epitaxial layer.