Diamond semiconductor system and method
AssigneeAkhan Semiconductor, Inc.
InventorAdam Khan
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Abstract
Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.
Claims9
A method of fabricating a monolithically integrated diamond semiconductor, the method including the steps of:
- seeding the surface of a substrate material;
- forming a diamond layer upon the surface of the substrate material;
- and
- forming a semiconductor layer within the diamond layer,
- wherein the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the n-type donor atoms are introduced to the lattice through ion tracks, wherein the ion track are created using p-type acceptor dopant atoms.
Dependencies are inferred from the claim text.