Selective growth of metal-containing hardmask thin films
AssigneeLam Research Corporation
InventorsDavid Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
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Abstract
Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.
Claims17
A method comprising:
- providing a patterned semiconductor substrate having features spaced apart on an underlying material to be etched;
- filling spaces between the features with an ashable fill such that top horizontal surfaces of the features are exposed and sidewalls of the features contact the ashable fill;
- after filling the spaces between the features, selectively depositing a metal-containing hard mask on the exposed top horizontal surfaces of the features relative to the ashable fill;
- and
- removing the ashable fill relative to the features and the metal-containing hard mask,
- wherein the metal-containing hard mask comprises a metal selected from the group consisting of aluminum and tin.
Dependencies are inferred from the claim text.