Method of fabricating semiconductor device by removing material on back side of substrate

A method of fabricating a semiconductor device, the method comprising:

• preparing a semiconductor substrate having a front side and a back side, opposing each other;
• forming a front side layer on the front side of the semiconductor substrate;
• forming a back side layer on the back side of the semiconductor substrate;
• forming a material layer on the semiconductor substrate on which the front side layer and the back side layer are formed, wherein the material layer is formed on the front side of the semiconductor substrate and formed on at least a portion of the back side of the semiconductor substrate;
• maintaining the material layer formed on the front side of the semiconductor substrate while removing the material layer formed on the at least a portion of the back side of the semiconductor substrate;
• and
• performing a semiconductor process to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate,
• wherein the forming of the front side layer on the front side of the semiconductor substrate comprises:
• loading the semiconductor substrate into a front side process chamber, wherein the back side of the semiconductor substrate is in contact with a substrate support chuck in the front side process chamber, and the front side of the semiconductor substrate is exposed;
• forming the front side layer on the front side of the semiconductor substrate in the front side process chamber;
• and
• unloading the semiconductor substrate on which the front side layer is formed from the front side process chamber.

A method of fabricating a semiconductor device, the method comprising:

• preparing a first back side process chamber and a second back side process chamber, wherein each of the first and second back side process chambers includes a lower showerhead having lower holes, an upper showerhead disposed on the lower showerhead and having upper holes, and a support structure between the lower showerhead and the upper showerhead;
• loading a first semiconductor substrate having a front side and a back side, opposing each other, into the first back side process chamber, wherein the back side of the first semiconductor substrate faces the lower showerhead in the first back side process chamber, and the front side of the first semiconductor substrate faces the upper showerhead in the first back side process chamber;
• forming a back side layer on the back side of the first semiconductor substrate in the first back side process chamber;
• unloading the first semiconductor substrate on which the back side layer is formed from the first back side process chamber;
• forming a material layer on the first semiconductor substrate, wherein the material layer covers the front side of the first semiconductor substrate and covers at least a portion of the back side of the first semiconductor substrate;
• loading the first semiconductor substrate on which the material layer is formed into the second back side process chamber, wherein the back side of the first semiconductor substrate on which the material layer is formed faces the lower showerhead in the second back side process chamber, and the front side of the first semiconductor substrate on which the material layer is formed faces the upper showerhead in the second back side process chamber;
• maintaining the material layer formed on the front side of the first semiconductor substrate while removing the material layer formed on the at least a portion of the back side of the first semiconductor substrate, in the second back side process chamber;
• and
• unloading the first semiconductor substrate in which the material layer remains on the front side, from the second back side process chamber.