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US 11,107,677 B2Granted
Method for manufacturing SiC epitaxial substrate
AssigneeMitsubishi Electric Corporation
InventorSusumu Hatakenaka
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Abstract
A SiC varied-growth-rate layer (2) is formed on a SiC bulk substrate (1) while increasing a growth speed from an initial growth speed of 2.0 μm/h or less. A speed change rate of the SiC varied-growth-rate layer (2) is 720 μm/h2 or less. A molar flow ratio of nitrogen to carbon when growth of the SiC varied-growth-rate layer (2) starts is 2.4 or less.
Claims5
A method for manufacturing a SiC epitaxial substrate comprising:
- forming a SiC varied-growth-rate layer on a SiC bulk substrate while increasing a growth speed from an initial growth speed of 2.0 μm/h or less,
- wherein a speed change rate of the SiC varied-growth-rate layer is 720 μm/h2 or less, and
- a molar flow ratio of nitrogen to carbon when growth of the SiC varied-growth-rate layer starts is 2.4 or less.
A method for manufacturing a SiC epitaxial substrate comprising:
- forming a first SiC varied-growth-rate layer and a second SiC varied-growth-rate layer in order on a SiC bulk substrate while increasing a growth speed from an initial growth speed of 2.0 μm/h or less;
- and
- forming a SiC buffer layer and a SiC drift layer in order on the second SiC varied-growth-rate layer,
- wherein a growth speed change rate of the second SiC varied-growth-rate layer is larger than a growth speed change rate of the first SiC varied-growth-rate layer.
1 more element
Dependencies are inferred from the claim text.