CVD Mo deposition by using MoOCl4
AssigneeEntegris, Inc.
InventorsThomas H. Baum, Philip S. H. Chen, Robert L. Wright, Bryan Hendrix, Shuang Meng, Richard Assion
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Abstract
A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
Claims17
A method of forming a molybdenum-containing material on a substrate, comprising establishing a nucleation surface on the substrate by contacting the substrate with vapor consisting of diborane vapor and optionally separately with molybdenum oxytetrachloride (MoOCl4) vapor and contacting the nucleation surface of the substrate with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate.
A method of forming a molybdenum-containing material on a semiconductor device substrate comprising silicon dioxide having a titanium nitride layer thereon, the method comprising:
- forming a nucleation surface on the titanium nitride layer by contacting the titanium nitride layer with vapor consisting of diborane vapor, contacting the nucleation surface with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate, wherein the vapor conditions are selected such that the deposited molybdenum-containing material has a resistivity of at most 20 μΩ·cm.
Dependencies are inferred from the claim text.