Formation of SiOCN thin films
AssigneeASM IP Holding B.V.
InventorsToshiya Suzuki, Viljami J. Pore
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Abstract
Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
Claims21
A method of forming a thin film comprising Si—O bonds on a substrate in a reaction space by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising:
- contacting a surface of the substrate with a vapor phase silicon precursor to thereby adsorb a silicon species on the surface of the substrate;
- and
- contacting the adsorbed silicon species with at least one reactive species generated by plasma formed from gas that does not comprise oxygen, wherein the adsorbed silicon species is not contacted with oxygen-containing reactive species generated from gas;
- and
- repeating the contacting steps until the thin film has been formed,
- wherein the silicon precursor comprises a silicon atom and a ligand comprising an amino or alkylamino group,
- wherein the silicon atom is bonded to oxygen,
- wherein at least one alkyl group is attached to the silicon atom, and
- wherein the silicon precursor does not comprise a halogen.
Dependencies are inferred from the claim text.