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US 11,107,672 B2Granted
Method of manufacturing semiconductor device and method of cleaning substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Chieh Lee
Life of this patent
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Abstract
In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.
Claims20
A method of cleaning a substrate, comprising:
- applying a solution including a size-modification material on a substrate from a nozzle, while the substrate being rotated, on which particles to be removed are disposed;
- generating, on the substrate, size-modified particles having a larger size than the particles to be removed, from the particles disposed on the substrate and the size-modification material;
- and
- removing the size-modified particles from the substrate,
- wherein the size-modification material includes a silane coupling agent.
2 more elements
A method of cleaning a substrate, the method comprising:
- performing plasma processing on one or more layers disposed over the substrate;
- dispensing a solution including a size-modification material over the substrate, on which particles caused by the plasma processing are disposed, from a nozzle while the substrate being rotated, the size-modification material includes a polymerizable material;
- generating, on the substrate, size-modified particles having a larger size than the particles caused by the plasma processing, from the particles caused by the plasma processing disposed on the substrate and the size-modification material via a polymerization process;
- and
- removing the size-modified particles from the substrate.
2 more elements
A method of cleaning a substrate, the method comprising:
- performing plasma processing on one or more layers disposed over the substrate;
- dispensing a solution including a size-modification material over the substrate, on which particles caused by the plasma processing are disposed, from a nozzle while the substrate being rotated, the size-modification material includes a polymer;
- generating, on the substrate, size-modified particles having a larger size than the particles caused by the plasma processing, from the particles caused by the plasma processing disposed on the substrate and the size-modification material;
- and
- removing the size-modified particles from the substrate,
- wherein the polymer includes at least one of:
- cellulose,
- a polymeric surfactant represented by:
- a poly acrylic acid having a weight-average molecular weight ranging from 1,000 to 4,000,000.
6 more elements
Dependencies are inferred from the claim text.