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US 11,107,615 B2Granted
Magnetization rotational element, magnetoresistance effect element, and memory device
AssigneeTDK Corporation
InventorsTohru Oikawa, Tomoyuki Sasaki, Yohei Shiokawa, Tatsuo Shibata
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Abstract
A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.
Claims10
A magnetization rotational element comprising:
- a ferromagnetic metal layer;
- a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer, the ferromagnetic metal layer being positioned on one surface of the spin-orbit torque wiring;
- and
- an insertion layer provided between the ferromagnetic metal layer and the spin-orbit torque wiring, wherein:
- the insertion layer includes a heavy metal having a melting point of 2000° C. or higher or an alloy containing the heavy metal,
- a film thickness of the insertion layer is less than a film thickness of one atomic layer thereof, and
- the insertion layer includes a plurality of gaps.
4 more elements
Dependencies are inferred from the claim text.