Thermistor element and method for producing same
AssigneeMitsubishi Materials Corporation
InventorsTakehiro Yonezawa, Kazutaka Fujiwara
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AssigneeMitsubishi Materials Corporation
InventorsTakehiro Yonezawa, Kazutaka Fujiwara
Estimating the term…
Provided are a thermistor element including a conductive intermediate layer containing RuO2 which can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor body 2 made of a thermistor material; a conductive intermediate layer 4 formed on the thermistor body; and an electrode layer 5 formed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuO2 particles that are in electrical contact with each other where SiO2 is placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.
A thermistor element comprising:
A method for producing a thermistor element comprising:
Dependencies are inferred from the claim text.