Adjustment of read and write voltages using a space between threshold voltage distributions
AssigneeMicron Technology, Inc.
InventorsZhenming Zhou, Murong Lang
Life of this patent
Estimating the term…
Abstract
A current demarcation voltage is determined, where the current demarcation voltage is to be applied to a memory cell for reading a state of the memory cell. Based on the current demarcation voltage and a space between a first threshold voltage distribution corresponding to a first state of the memory cell and a second threshold voltage distribution corresponding to a second state of the memory cell, a test demarcation voltage having a low error rate of reading the state of the memory cell is selected. The current demarcation voltage is set to correspond to the selected test demarcation voltage.
Claims20
A system comprising:
- a memory component including one or more memory cells;
- and
- a processing device, operatively coupled with the memory component, the processing device configured to perform operations comprising:
- determining a current demarcation voltage that is to be applied to a memory cell for reading a state of the memory cell;
- selecting, based on the current demarcation voltage and a space between a first threshold voltage distribution corresponding to a first state of the memory cell and a second threshold voltage distribution corresponding to a second state of the memory cell, a test demarcation voltage having a low error rate of reading the state of the memory cell;
- and
- setting the current demarcation voltage to correspond to the selected test demarcation voltage.
A method comprising:
- determining a current demarcation voltage that is to be applied to a memory cell for reading a state of the memory cell;
- selecting, based on the current demarcation voltage and a space between a first threshold voltage distribution corresponding to a first state of the memory cell and a second threshold voltage distribution corresponding to a second state of the memory cell, a test demarcation voltage having a low error rate of reading the state of the memory cell;
- and
- setting the current demarcation voltage to correspond to the selected test demarcation voltage.
A method comprising:
- counting a number of write operations performed on a memory cell;
- and
- responsive to determining that the number of write operations performed on the memory cell satisfies a first threshold condition:
- determining a current reset voltage that is to be applied to the memory cell for changing a state of the memory cell from a set state to a reset state;
- determining, based on the current reset voltage, a test reset voltage having an error rate in accordance with a second threshold condition;
- and
- setting the current reset voltage to correspond to the determined test reset voltage.
Dependencies are inferred from the claim text.