Storage device and operating method thereof
AssigneeSK hynix Inc.
InventorsMin Ho Her, Dong Hyun Kim, Seung Il Kim, Yong Ho Kim, Jae Min Lee, Seon Young Choi
Life of this patent
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Abstract
The present disclosure relates to an electronic device. A storage device includes a memory device configured to include a plurality of memory cells and a memory controller configured to determine a read voltage for a read operation to be performed on the memory device according to whether the read operation is a cache read operation.
Claims20
A storage device, comprising:
- a memory device configured to include a plurality of memory blocks;
- and
- a memory controller configured to provide the memory device with information on levels of an offset voltage according to a type of a read operation to be performed among a plurality of read operations and to transmit a read command instructing the memory device to perform a read operation on selected memory cells included in the plurality of memory blocks using read voltages obtained by applying the offset voltage to default read voltages of the memory device,
- wherein the plurality of read operations include a cache read operation, a short-time read operation, a cross temperature read operation, or a first page read operation.
A method of operating a storage device comprising a memory device and a memory controller controlling the memory device, wherein the memory device includes a plurality of memory cells, the method comprising:
- receiving a read request with respect to selected memory cells, among the plurality of memory cells;
- obtaining levels of an offset voltage according to a type of a read operation to be performed among a plurality of read operations by the memory device based on an environment information;
- calculating read voltages to be used for the read operation by applying the offset voltage to default read voltages of the memory device;
- performing the read operation using the read voltages,
- wherein the plurality of read operations include a cache read operation, a short-time read operation, a cross temperature read operation, or a first page read operation.
A memory system comprising:
- a memory device including memory cells;
- a storage storing at least one piece of information representing:
- whether a read operation to be performed is a cache read operation;
- elapsed time after completion of a previous program operation;
- temperature of the memory cells during the previous program operation;
- and
- whether a target memory block of the read operation is an unselected block during a previous operation;
- a read voltage determiner determining a read voltage for the read operation by referring to the information and selectively based on temperature of the memory cells during the read operation;
- and
- a read operation controller controlling the memory device to perform the read operation with the determined read voltage,
- wherein the information is stored in the storage on a basis of physical addresses of the memory cells.
Dependencies are inferred from the claim text.