Memory with improved cross temperature reliability and read performance

A method of operating a memory device, the method comprising:

• receiving an indication of a write operation to program memory cells of a memory array of the memory device with data;
• receiving temperature information at the memory device;
• and
• programming memory cells of the memory array with data according to a first threshold voltage distribution using a programming algorithm that includes a first number of voltage steps when the temperature information indicates an operating temperature in a first temperature range, and increasing read voltage margins between programmed threshold voltages from the first threshold voltage distribution by programming the memory cells of the memory array with data according to a second threshold voltage distribution using a programming algorithm with a second increased number of voltage steps when the temperature information indicates an operating temperature in a second temperature range and omitting one or more of the second number of voltage steps in the programming algorithm with the second increased number of voltage steps.

A non-transitory computer readable storage medium comprising instructions configured to cause a memory control unit of a memory device to:

• receive an indication of a write operation to program memory cells of a memory array of the memory device with data;
• receive temperature information at the memory device;
• and
• initiate programming the memory cells of the memory array with data according to a first threshold voltage distribution using a programming algorithm that includes a first number of voltage steps when the temperature information indicates an operating temperature in a first temperature range, and program the memory cells of the memory array with data according to a second threshold voltage distribution using a programming algorithm with a second increased number of voltage steps when the temperature information indicates an operating temperature in a second temperature range, wherein the programming with the second threshold voltage distribution increases read voltage margins between programmed threshold voltages from the first threshold voltage distribution by omitting one or more of the second number of voltage steps in the programming algorithm with the second increased number of voltage steps.