Memory device and method of operating memory device
AssigneeSK hynix Inc.
InventorSang Heon Lee
Life of this patent
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Abstract
The present technology includes a memory device and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells connected to word lines, peripheral circuits configured to generate operation voltages to be applied to the word lines, and control logic configured to control the peripheral circuits in response to a program command, a read command, or an erase command. The peripheral circuits include a voltage generator that adjusts a section of threshold voltage distributions of memory cells to be programmed among the memory cells, according to a distance between the word lines.
Claims14
A memory device comprising:
- a memory block including a plurality of memory cells connected to word lines;
- peripheral circuits configured to generate operation voltages to be applied to the word lines;
- and
- control logic configured to control the peripheral circuits in response to a program command, a read command, or an erase command,
- wherein the peripheral circuits include a voltage generator that is configured such that, when the word lines are separated by a first distance, a voltage difference between an erased state and a programmed state is a first voltage, and when the word lines are separated by a second distance that is smaller than the first distance, the voltage difference between the erased state and the programmed state is a second voltage that is smaller than the first voltage.
A memory device comprising:
- a memory block including a vertical channel film extending in a vertical direction on a substrate, and word lines stacked and spaced apart from each other along the vertical channel film;
- and
- a voltage generator configured to generate program voltages, pass voltages, and program verify voltages to be applied to the word lines, during a program operation,
- wherein the voltage generator is additionally configured such that, when the word lines are separated by a first distance, a voltage difference between an erased state and a programmed state is a first voltage, and when the word lines are separated by a second distance that is smaller than the first distance, the voltage difference between the erased state and the programmed state is a second voltage that is smaller than the first voltage.
A method of operating a memory device, the method comprising:
- setting a program window including threshold voltage distributions of a program according to a distance between word lines such that, when the word lines are separated by a first distance, a voltage difference between an erased state and a programmed state is a first voltage, and when the word lines are separated by a second distance that is smaller than the first distance, the voltage difference between the erased state and the programmed state is a second voltage that is smaller than the first voltage.
Dependencies are inferred from the claim text.