Controlling forming process in RRAM devices using feedback circuits

Abstract

Technologies relating to controlling forming process in RRAM devices implemented in a cross-bar circuit using one or more feedback circuits are disclosed. An example apparatus includes an RRAM cell configured to form a channel; a MOSFET having a drain terminal, a source terminal, and a gate terminal, wherein the MOSFET is connected to the RRAM cell via the drain terminal; a TIA connected to the MOSFET via the source terminal; a first signal generator connected to the RRAM cell; a second signal generator connected to the MOSFET via the gate terminal; and a comparator having a first input end, a second input end, and an output end, wherein the comparator is connected to the TIA via the first input end, the second input end is connected to a reference voltage source, and the output end is connected to the first signal generator and the second signal generator.

Dependencies are inferred from the claim text.