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US 11,107,520 B2Granted
Apparatuses and methods for shift decisions
AssigneeMicron Technology, Inc.
InventorGlen E. Hush
Life of this patent
Estimating the term…
Abstract
The present disclosure includes apparatuses and methods for shift decisions. An example apparatus includes a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes a sense amplifier and a compute component coupled to a sense line and configured to implement logical operations and a decision component configured to implement a shift of data based on a determined functionality of a memory cell in the array.
Claims19
An apparatus, comprising:
- a memory device comprising sensing circuitry coupled to an array of memory cells via a plurality of sense lines;
- wherein the sensing circuitry includes:
- a sense amplifier coupled to a sense line;
- and
- decision circuitry configured to direct a shift in position of data responsive to an indicator of a determined functionality of a memory cell in the array;
- and
- shift circuitry configured to:
- in response to the indicator having a first value, cause a shift of a data value stored in a first memory cell to be stored in a second memory cell;
- and
- in response to the indicator having a second value, cause a shift of the data value stored in the first memory cell to be stored in a third memory cell, wherein the third memory cell is in a particular location with respect to the first memory cell.
7 more elements
An apparatus, comprising:
- a memory device comprising sensing circuitry coupled to an array of memory cells via a plurality of sense lines;
- wherein the sensing circuitry includes:
- a sense amplifier coupled to a sense line;
- and
- decision circuitry configured to direct a shift of data responsive to performance of a logical operation using an indicator value corresponding to a determined functionality of a memory cell in the array;
- and
- shift circuitry that couples the sense amplifier to at least a portion of the array, the shift circuitry configured to:
- in response to the indicator having a first value, cause a shift of a data value stored in a first memory cell to be stored in a second memory cell;
- and
- in response to the indicator having a second value, cause a shift of the data value stored in the first memory cell to be stored in a third memory cell, wherein the third memory cell is in a particular location with respect to the first memory cell.
7 more elements
A method for operating a memory device, comprising:
- accessing an indicator value that indicates a predetermined functionality of a memory cell;
- providing the indicator value to decision circuitry configured to direct a data shift based on the indicator value;
- deciding, in response to the predetermined functionality of the memory cell indicated by the indicator value, whether to shift data to either an adjacent block of a plurality of sense lines or to a non-adjacent block of a plurality of sense lines in the memory device;
- and
- shifting the data, using shift circuitry coupled to the memory cell, to either:
- an adjacent block of a plurality of sense lines in the memory device based on the decision by the decision circuitry in response to the indicator value being a first value;
- or
- a non-adjacent block of a plurality of sense lines in the memory device based on the decision by the decision circuitry in response to the indicator value being a second value, wherein the non-adjacent block is in a particular location with respect to the adjacent block.
5 more elements
Dependencies are inferred from the claim text.