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US 11,107,516 B1Granted
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
AssigneeSanDisk Technologies LLC
InventorsPeter Rabkin, Masaaki Higashitani
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Abstract
A ferroelectric memory device includes a two-dimensional electron gas channel, a gate electrode, and a ferroelectric element located between the gate electrode and the two-dimensional electron gas channel.
Claims20
A memory device, comprising:
- at least one unit layer stack located over a substrate, wherein the at least one unit layer stack comprises a metallic source layer, a channel-level insulating layer, a metallic drain layer, and a device-isolation-level insulating layer;
- a plurality of memory openings vertically extending through the at least one unit layer stack;
- and
- memory opening fill structures located within a respective one of the plurality of memory openings,
- wherein each of the memory opening fill structures comprises a tubular ferroelectric dielectric layer and at least one two-dimensional electron gas channel vertically extending between the metallic source layer and the metallic drain layer of the at least one unit layer stack.
2 more elements
A memory device comprising:
- a two-dimensional electron gas channel located on a substrate;
- a source region and a drain region located at end portions of the two-dimensional electron gas channel;
- a two-dimensional Van der Waals ferroelectric material layer located on the two-dimensional electron gas channel and comprising a ferroelectric material selected from CuInP2S6, a-In2Se3, g-SbP, g-SbAs, or Group IV monochalcogenide material having a formula of MX in which M is selected from Ge, Sn, or Pb, and X is selected from S, Se, or Te;
- and
- at least one gate electrode located over the two-dimensional Van der Waals ferroelectric material layer.
2 more elements
A ferroelectric memory device, comprising:
- a channel;
- a gate electrode;
- a ferroelectric element located between the gate electrode and the channel, wherein the ferroelectric element comprises two-dimensional Van der Waals ferroelectric material layer comprising a ferroelectric material selected from CuInP2S6, a-In2Se3, g-SbP, g-SbAs, or Group IV monochalcogenide material having a formula of MX in which M is selected from Ge, Sn, or Pb, and X is selected from S, Se, or Te;
- and
- a first interfacial dielectric layer located between the ferroelectric element and the gate electrode.
2 more elements
Dependencies are inferred from the claim text.