Spin-orbit torque magnetic memory device using alternating current

A magnetic memory comprising:

• a plurality of first conductive lines extending in a first direction;
• a plurality of second conductive lines extending in a second direction perpendicular to the first direction;
• a plurality of magnetic tunnel junction elements, each including a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer and respectively disposed on intersections between the first conductive lines and the second conductive lines;
• a first AC power supply providing first AC current to the first conductive lines;
• a second AC power supply providing second AC current to the second conductive lines;
• and
• bitlines extending parallel to the first conductive lines and connected to the reference layers of the magnetic tunnel junction elements arranged in the first direction,
• wherein at least one of the plurality of the first conductive lines and at least one of the plurality of the second conductive line are disposed in direct contact with at least one of the free layer.