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US 11,101,372 B2Granted
Double-sided vertical power transistor structure
OwnerJohn Woodinventor
Life of this patent
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Abstract
Power semiconductor devices can often be expensive to produce and/or expensive to operate (i.e. inefficient). The present structure seeks to overcome these problems by providing a double-sided vertical power transistor structure that poses a unipolar path and a second parallel bipolar path.
Claims5
A double-sided vertical power transistor structure, comprising:
- a drift region of a first conductivity type;
- first and second electrode regions adjacent opposite ends of said drift region, each of the first and second electrode regions being of the first conductivity type;
- a third electrode region of a second conductivity type, wherein said third electrode region is highly doped relative to the drift region, the third electrode region formed adjacent to said first electrode region;
- and
- a fourth electrode region of the second conductivity type, wherein said third electrode region is highly doped relative to the drift region, the third electrode region formed adjacent to said second electrode region;
- wherein said drift region is lightly doped relative to said first and second electrode regions.
3 more elements
Dependencies are inferred from the claim text.