Loading patent…
AssigneeShanghai Institute of Technical Physics, Chinese Academy of Sciences
InventorsJianlu Wang, Guangjian Wu, Xudong Wang, Hong Shen, Tie Lin, Xiangjian Meng, Junhao Chu
Estimating the term…
A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.
A ferroelectric domain regulated optical readout mode memory, comprising, structurally sequentially from bottom to top, a substrate, a transition metal compound two-dimensional semiconductor and a polyvinylidene fluoride based ferroelectric functional layer,
A method for preparing a ferroelectric domain regulated optical readout mode memory, wherein, the ferroelectric domain regulated optical readout mode memory comprises, structurally sequentially from bottom to top, a substrate, a transition metal compound two-dimensional semiconductor and a polyvinylidene fluoride based ferroelectric functional layer, wherein the substrate is made from any conductive material;
Dependencies are inferred from the claim text.