Adapting the duration of exposure slots in multi-beam writers
AssigneeIMS Nanofabrication GmbH
InventorsGottfried Hochleitner, Christoph Spengler, Wolf Naetar
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AssigneeIMS Nanofabrication GmbH
InventorsGottfried Hochleitner, Christoph Spengler, Wolf Naetar
Estimating the term…
In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e., the sum of durations of contributing exposure slots, and the exposure slot durations are adjusted by: (i) determining a desired duration of the effective pixel exposure time for the pixels, as a function of the time of exposure of the pixels, (ii) determining contributing exposure slots for the pixels, (iii) calculating durations for the contributing exposure slots thus determined such that the sum of the durations over said contributing exposure slots is an actual effective exposure time which approximates said desired duration of the effective pixel exposure time. The durations in step (iii) are calculated in accordance with a predetermined set of allowed durations, wherein at least one of the durations thus calculated is different from the other durations selected for said set of exposure slots.
Method for exposing a desired pattern on a target in a charged-particle lithography apparatus, using a particle beam of electrically charged particles, which is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an image area on the target,
Dependencies are inferred from the claim text.